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PMD7N60E5
Description
PMD7N60E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252T, which accords with the RoHS standard.
Features
■Fast body diode eliminates the need for external diode in ZVS applications.
■Lower gate charge results in simpler drive requirements
■Higher gate voltage threshold offers improved noise immunity
■Low on-resistance
■RoHS compliant
Package
TO-252T
Datasheet
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